CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM3069N is
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low rDS(ON), low threshold voltage, and low
leakage current.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
• High current (ID=6.9A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDS
VGS
ID
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
IDM
PD
TJ, Tstg
ΘJA
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=10V, ID=7.0A
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=4.0A
VDS=15V, VGS=10V, ID=5.4A
VDS=15V, VGS=10V, ID=5.4A
UNITS
V
V
6.9
A
40
A
1.2
W
-55 to +150
°C
104
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
VGS=12V, VDS=0
IDSS
VDS=24V, VGS=0
BVDSS
30
12
MAX
100
UNITS
nA
1.0
μA
0.9
1.4
V
25
30
mΩ
28
35
mΩ
38
50
mΩ
30
0.7
V
11
nC
1.0
nC
1.2
nC
47
pF
580
pF
42
pF
ton
VDS=15V, VGS=0, f=1.0MHz
VDD=15V, ID=1.0A, RG=15Ω
20
ns
toff
VDD=15V, ID=1.0A, RG=15Ω
28
ns
Qgs
Qgd
Crss
Ciss
Coss
VDS=15V, VGS=10V, ID=5.4A
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=1.0MHz
R1 (10-August 2012)
CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-89 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING: FULL PART NUMBER
R1 (10-August 2012)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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